| 摘要 |
A chemical amplified photoresist composition comprising a photosensitive polymer containing the following structure unit of formula (II):Wherein R is hydrogen or C1-C4 alkyl group; R' is C1-C4 alkyl group; n is an integer of 2, 3, 4, 5 or 6. This chemical amplified photoresist composition can be applied to general lithography processes, especially in 193 nm lithography and the patterns formed from the photoresist exhibit excellent resolution and photosensitivity.
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