| 摘要 |
Disclosed are a structure of a semiconductor substrate and a method of manufacturing the semiconductor substrate preventing a reduction of gettering capability due to a high-temperature heat treatment. In a semiconductor substrate containing a highly concentrated impurity having a polysilicon layer to be a gettering site on a rear surface side and an epitaxial layer 6 on a front surface side, an impurity concentration is lower near the rear and front surfaces and higher at the center in a cross section of the semiconductor substrate. The method of manufacturing the semiconductor substrate comprises the steps of: performing the heat treatment of a silicon substrate at a temperature of 1100° C. or more and a melting temperature or less of the silicon substrate before forming the polysilicon layer 4 and the epitaxial layer 6; forming the polysilicon layer 4 on the rear surface side of the silicon substrate; and forming the epitaxial layer 6 on the front surface side of the silicon substrate. |
