High selectivity Si-rich SiON etch-stop layer

摘要

The present invention provides an anti-reflective Si-Rich Silicon oxynitride (SiON) etch barrier layer and two compatible oxide etch processes. The Si-Rich Silicon oxynitride (SiON) etch barrier layer can be used as a hard mask in a dual damascene structure and as a hard mask for over a polysilicone gate. The invention has the following key elements: 1) Si rich Silicon oxynitride (SiON) ARC layer, 2) Special Silicon oxide Etch process that has a high selectivity of Si-Rich SiON to silicon oxide or SiN; 3) Special Si Rich SiON spacer process for a self aligned contact (SAC).A dual damascene structure is formed by depositing a first dielectric layer. A novel anti-reflective Si-Rich Silicon oxynitride (SiON) etch barrier layer is deposited on top of the first dielectric layer. A first opening is etched in the first insulating layer. A second dielectric layer is deposited on the anti-reflective Si-Rich Silicon oxynitride (SiON) etch barrier layer. A second dual damascene opening is etched into the dielectric layers. The anti-reflective Si-Rich Silicon oxynnitride (SiON) etch barrier layer can also serve as an ARC layer during these operations to reduce the amount of reflectance from conductive region to reduce distortion of the photoresist pattern.