发明名称 Method of manufacturing a silicon substrate with a recess, an ink jet head manufacturing method, a silicon substrate with a recess, and an ink jet head
摘要 A manufacturing method for a silicon substrate having a recess and an ink jet head, as well as the silicon substrate and the ink jet head. A silicon substrate having recesses is manufactured by a method providing for increased precision, resolution, and reduced size by wet oxidation of the silicon substrate to form a thermal oxidation film as the mask used for recess etching, etching recesses into the silicon substrate using as the mask the thermal oxidation film formed by wet oxidation, removing the thermal oxidation film formed in the masking process after etching is completed, then forming a protective film on the silicon substrate by dry oxidation of the substrate after removing the mask. The resulting silicon substrate can be used to manufacture an ink jet head in which the etched recesses form diaphragms and ink nozzles, the protective film provides high resistance to corrosion by ink, and reduced power consumption can be achieved.
申请公布号 US6315394(B1) 申请公布日期 2001.11.13
申请号 US19990239396 申请日期 1999.01.28
申请人 SEIKO EPSON CORPORATION 发明人 FUJII MASAHIRO
分类号 B41J2/16;(IPC1-7):B41J2/04 主分类号 B41J2/16
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