发明名称 |
Inter-metal dielectric film composition for dual damascene process |
摘要 |
The use of an intermetal dielectric (IMD) layer and an organic etch-stop layer are disclosed in forming a dual damascene in order to reduce the RC delay and the overall dielectric constant of the damascene interconnect. The disclosed IMD layer is an FSG and the etch-stop layer is an organic spin-on-glass (SOG). A dual damascene structure utilizing the IMD layer and the organic etch-stop layer is also disclosed.
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申请公布号 |
US6316351(B1) |
申请公布日期 |
2001.11.13 |
申请号 |
US20000583399 |
申请日期 |
2000.05.31 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
CHEN DIAN-HAU;MA CHING-TIEN;LEE HSIANG-TAN |
分类号 |
H01L21/311;H01L21/312;H01L21/316;H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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