摘要 |
Coils for use within high density plasma chambers are provided that do not electrically disconnect or short circuit following repeated depositions and that produce films having reduced in-film defect densities. To reduce in-film defect densities, dielectric inclusion content, porosity, grain size and surface roughness of a coil are reduced, while the mechanical strength of the coil is increased so as to both decrease defect generation and thermal creep rate (e.g., to prevent electrical disconnection or short circuiting of the coil following repeated depositions).
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