发明名称 Coil for sputter deposition
摘要 Coils for use within high density plasma chambers are provided that do not electrically disconnect or short circuit following repeated depositions and that produce films having reduced in-film defect densities. To reduce in-film defect densities, dielectric inclusion content, porosity, grain size and surface roughness of a coil are reduced, while the mechanical strength of the coil is increased so as to both decrease defect generation and thermal creep rate (e.g., to prevent electrical disconnection or short circuiting of the coil following repeated depositions).
申请公布号 US6315872(B1) 申请公布日期 2001.11.13
申请号 US19990415328 申请日期 1999.10.08
申请人 APPLIED MATERIALS, INC. 发明人 PAVATE VIKRAM;NARASIMHAN MURALI
分类号 C23C14/34;H01J37/32;H01J37/34;H01L21/203;H01L21/285;(IPC1-7):C23C14/34 主分类号 C23C14/34
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