Semiconductor device with insulated gate transistor

摘要

An insulated gate transistor comprises source regions; drain regions; channel regions provided between the source and drain regions; a gate electrode; and gate insulative film provided between the channel regions and the gate electrode. The device has a semiconductor region which is provided so as to be in contact with the channel regions and has the same conductivity type as that of the channel region and has an impurity concentration higher than that of the channel region. The gate electrode has at least two opposite portions which face each other.