| 发明名称 |
Boride electrodes and barriers for cell dielectrics |
| 摘要 |
Titanium boride (TiBx), zirconium boride (ZrBx) and hafnium boride (HfBx) barriers and electrodes for cell dielectrics for integrated circuits, particularly for DRAM cell capacitors. The barriers protect cell dielectrics from diffusion and other interaction with surrounding materials during subsequent thermal processing.
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| 申请公布号 |
US6316800(B1) |
申请公布日期 |
2001.11.13 |
| 申请号 |
US20000563909 |
申请日期 |
2000.05.04 |
| 申请人 |
MICRON TECHNOLOGY INC. |
发明人 |
AL-SHAREEF HUSAM N.;DEBOER SCOTT J.;GEALY DAN;THAKUR RANDHIR P. S. |
| 分类号 |
H01L21/02;H01L21/285;H01L21/8242;H01L27/108;(IPC1-7):H01L33/00;H01L29/94 |
主分类号 |
H01L21/02 |
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