发明名称 |
Low on-resistance trench lateral MISFET with better switching characteristics and method for manufacturing same |
摘要 |
A high-voltage and low on-resistance semiconductor device incorporates a trench structure that provides improved switching characteristics. In a preferred embodiment, a Trench Lateral Power MISFET is provided having a gate, channel and drift regions that are built on the side-walls of the trench. The process used to form the MISFET involves a self-aligned trench bottom contact hole to contact a source provided at the bottom of the trench to achieve minimum pitch and very low on-resistance. An example of a MISFET with 80 V breakdown voltage having a cell pitch of 3.4 microns is disclosed in which an on-resistance of 0.7 mOMEGA-cm2 is realized. The switching characteristics of the MISFET are twice as good as that of prior MISFET device structures.
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申请公布号 |
US6316807(B1) |
申请公布日期 |
2001.11.13 |
申请号 |
US19980224605 |
申请日期 |
1998.12.31 |
申请人 |
FUJISHIMA NAOTO;SALAMA C. ANDRE T. |
发明人 |
FUJISHIMA NAOTO;SALAMA C. ANDRE T. |
分类号 |
H01L29/417;H01L29/78;(IPC1-7):H01L29/76 |
主分类号 |
H01L29/417 |
代理机构 |
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地址 |
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