发明名称 |
Semiconductor device having capacitive element structure and multilevel interconnection structure and method of fabricating the same |
摘要 |
A capacitive element structure in a semiconductor device having an interconnection structure. The capacitive element structure includes a capacitive element having a capacitive dielectric film made of an oxide compound. The capacitive element structure is above at least a first level interconnection of the interconnection structure.
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申请公布号 |
US6316801(B1) |
申请公布日期 |
2001.11.13 |
申请号 |
US19990262070 |
申请日期 |
1999.03.04 |
申请人 |
NEC CORPORATION |
发明人 |
AMANUMA KAZUSHI |
分类号 |
H01L21/02;H01L21/768;H01L21/8242;(IPC1-7):H01L27/108 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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