摘要 |
A method for determining an optimized set of polishing parameters is disclosed. a wafer is polished using one set of polishing parameters, and a first polishing result can then be determined. The wafer is then polished using a second set of polishing parameters, wherein at least one of the first polishing parameters has been changed, and a second polishing result can be determined. The first and second polishing results can then be analyzed to determine an optimized set of polishing parameters. A second wafer can then be polishing using the optimized set of polishing parameters.
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