发明名称 |
Large magnetoresistance in non-magnetic silver chalcogenides and new class of magnetoresistive compounds |
摘要 |
The heavily-doped silver chalcogenides, Ag2+deltaSe and Ag2+deltaTe, show magnetoresistance effects on a scale comparable to the "colossal" magnetoresistance (CMR) compounds. Hall coefficient, magnetoconductivity, and hydrostatic pressure experiments establish that elements of narrow-gap semiconductor physics apply, but both the size of the effects at room temperature and the linear field dependence down to fields of a few Oersteds are surprising new features.
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申请公布号 |
US6316131(B1) |
申请公布日期 |
2001.11.13 |
申请号 |
US19980153087 |
申请日期 |
1998.09.10 |
申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE UNITED STATES DEPARTMENT OF ENERGY |
发明人 |
SABOUNGI MARIE-LOUIS;PRICE DAVID C. L.;ROSENBAUM THOMAS F.;XU RONG;HUSMANN ANKE |
分类号 |
G01R33/09;G11B5/39;(IPC1-7):G11B5/66 |
主分类号 |
G01R33/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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