发明名称 Large magnetoresistance in non-magnetic silver chalcogenides and new class of magnetoresistive compounds
摘要 The heavily-doped silver chalcogenides, Ag2+deltaSe and Ag2+deltaTe, show magnetoresistance effects on a scale comparable to the "colossal" magnetoresistance (CMR) compounds. Hall coefficient, magnetoconductivity, and hydrostatic pressure experiments establish that elements of narrow-gap semiconductor physics apply, but both the size of the effects at room temperature and the linear field dependence down to fields of a few Oersteds are surprising new features.
申请公布号 US6316131(B1) 申请公布日期 2001.11.13
申请号 US19980153087 申请日期 1998.09.10
申请人 THE UNITED STATES OF AMERICA AS REPRESENTED BY THE UNITED STATES DEPARTMENT OF ENERGY 发明人 SABOUNGI MARIE-LOUIS;PRICE DAVID C. L.;ROSENBAUM THOMAS F.;XU RONG;HUSMANN ANKE
分类号 G01R33/09;G11B5/39;(IPC1-7):G11B5/66 主分类号 G01R33/09
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