| 摘要 |
920,307. Semi-conductor devices. SIEMENS & HALSKE A.G. March 17, 1961 [March 18, 1960], No. 9827/61. Class 37. An alloy electrode in a semi-conductor device is produced by depositing a layer of conducting material and particles of a substance on the surface of a semi-conductor crystal and then alloying, the substance having a higher melting- point than the material and being insoluble in the alloy at the alloying temperature. The semi-conductor crystal may consist of silicon or germanium and the particles of carbon, tungsten, molybdenum, tantalum or oxides of either the semi-conductor or the deposited conducting material which may consist of aluminium, antimony, indium, gold or silver. In one example 3 mg. of germanium dioxide was deposited simultaneously with vapour deposition of 140 mg. of aluminium on to a germanium body and then alloyed at 470‹ C. for two minutes to provide a layer 0.8 to 1.0 Á thick. The layer thickness may be between 1 and 10 Á and the process is particularly suitable for the production of mesa transistors. Deposition may be carried out in an atmosphere of oxygen and/or noble metals and/or inert gases. The partial vapour pressures and the relative proportion by weight of particles to conducting substance may be varied during deposition and the grain size of the particles may lie between 0.1 and 2 Á. |
