发明名称 |
Uv-enhanced silylation process to increase etch resistance of ultra thin resists |
摘要 |
The present invention relates to systems and methods for increasing the hydrophobicity of patterned resists. In one embodiment, the present invention relates to a method of processing an ultra-thin resist, involving depositing the ultra-thin photoresist over a semiconductor substrate; irradiating the ultra-thin resist with electromagnetic radiation; developing the ultra-thin resist with a developer to form a patterned resist, the patterned resist having a surface with a first hydrophobicity; contacting the patterned resist with a transition solvent to provide the surface of the patterned resist with a second hydrophobicity, wherein the second hydrophobicity is greater than the first hydrophobicity and contact of the patterned resist with the transition is conducted between developing the ultra-thin resist and rinsing patterned resist; and rinsing the patterned resist having the second hydrophobicity with an aqueous solution. |
申请公布号 |
AU5373501(A) |
申请公布日期 |
2001.11.12 |
申请号 |
AU20010053735 |
申请日期 |
2001.04.19 |
申请人 |
ADVANCED MICRO DEVICES INC. |
发明人 |
BHARATH RANGARAJAN;RAMKUMAR SUBRAMANIAN;KHOI A. PHAN;BHANWAR SINGH;MICHAEL K. TEMPLETON;SANJAY K. YEDUR;BRYAN K. CHOO |
分类号 |
G03F7/26;H01L21/027;H01L21/311;H01L21/3213 |
主分类号 |
G03F7/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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