| 摘要 |
A thermopile (2) and an electronic evaluation unit (6) are integrated into a semiconductor substrate (1). Two metallic elevations (8, 9) are applied and thermally connected to the rows of contacts of the thermopile. Said elevations can, for example, be connected to connection contacts, in such a way that a temperature difference can be measured externally to the semiconductor substrate (1). As the electronic evaluation unit is located on the same substrate as the thermopile, temperature differences can thus be measured with greater accuracy and lower susceptibility to interference. |
