| 摘要 |
The invention concerns a method for producing highly dependable ion projecting lithography, from single or multiple charge ions which consists in causing a selective interaction by applying a voltage difference between an absorbent layer and a reflecting layer of the reticle. In one embodiment, the active reticle (1) comprises a solid substrate (100), a conductive layer (101) etched with patterns (10) corresponding to the micronic patterns to be printed. The patterns comprise a core (11) made of conductive material connected to the positive terminal (A) of an electric supply (110), the conductive layer (101) being connected to the other terminal (B), the core (11) of the patterns being insulated from the conductive layer (101) by a layer (12). A voltage difference is applied between the two terminals (A, B) so that the incident ions (I1, I2) are selectively neutralised and back-scattered as they approach the reticle (1). |
