| 摘要 |
PURPOSE: A sputtering target for a thin film is provided in which not only a life cycle of the target is extended by uniformly consuming the overall portion of the target, but also a rate of target to be adhered is not decreased due to a sufficient amount of magnetic leakage field. CONSTITUTION: The sputtering target for a thin film is a target(100) used for supplying a thin film material in the sputtering process for forming a thin film, and when the target(100) is formed evenly in case that the target is used in a magnetron sputtering system, a magnetic leakage field is increased so that a protrusion part is formed at a portion where a consumption ratio is increased during sputtering, thereby forming a boundary of the target center part(100a) and the target edge part(100c), and the center part is formed so that the center part has a smaller thickness than the edge part, wherein a thickness of the center part is 1/5 to 4/5 times of that of the edge part, and a thickness of the protrusion part(100b) is 1.5 to 3 times of that of the edge part, and wherein the protrusion part is formed in a gently curved projection shape.
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