SEMICONDUCTOR DEVICE, FABRICATING METHOD THEREOF AND METHOD FOR DISPOSING DUMMY REGION

摘要

PURPOSE: A semiconductor device is provided to prevent a substrate floating problem or hot carrier problem by including a dummy region, and to reduce tension stress applied to the semiconductor device by distributing the tension stress of a partial isolation layer to the dummy region. CONSTITUTION: A silicon-on-insulator(SOI) substrate(1) includes a substrate, a buried insulation layer(2) formed on the substrate and a semiconductor layer formed on the buried insulation layer. The partial isolation layer(5b) is formed near the surface of the semiconductor layer, not in contact with the buried insulation layer. The semiconductor device has the SOI substrate, the partial isolation layer and a part of the semiconductor layer. The dummy region(DM1) includes the rest of the semiconductor layer by interposing the partial isolation layer between the semiconductor devices, not having a capacity as a device.