发明名称 PLASMA DEPOSITION DEVICE FOR FORMING THIN FILM
摘要 PURPOSE: A plasma deposition device for forming a thin film is provided to be capable of forming a uniform and high-quality film deposition on a large-sized deposition substrate and to increase the number of products (such as liquid crystal panel) to be taken from one deposition substrate, thereby contributing to the improvement of productivity. CONSTITUTION: A plasma deposition device(1) comprises electrodes(13) mounted on an electrode substrate(11), gas induction holes(12) provided between said electrodes(13) for introducing material gas G to the interior, a deposition substrate(30) provided to oppose to said electrodes(13) from a predetermined distance d, and a power source 60 generating plasma from said material gas by providing energy thereto, wherein material gas(G) is resolved to active species R deposited on said deposition substrate(30), characterized in applying voltage to adjacent electrodes(13) so as to generate discharge DC.
申请公布号 KR20010096568(A) 申请公布日期 2001.11.07
申请号 KR20010007057 申请日期 2001.02.13
申请人 SHARP CORPORATION 发明人 AKAI TOSHIO;OKAMOTO SATOSHI;SAKAI OSAMU
分类号 C23C16/503;C23C16/24;C23C16/509;H01J37/32;H01L21/205;(IPC1-7):H01L21/205 主分类号 C23C16/503
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