SOI SUBSTRATE AND FABRICATING METHOD THEREOF AND SOI MOSFET USING THE SAME

摘要

PURPOSE: An SOI substrate and a fabricating method thereof and an SOI MOSFET using the same are provided to solve a floating body effect and form an SOI substrate without an additional layout space. CONSTITUTION: The second conductive type well region(51) is formed on a substrate(50). A buried oxide layer(60) is formed on the whole surface of the substrate(50). The first thin film(71) is formed on the buried oxide layer(60) formed on the remaining region except for the well region(51). The second thin film(72) is formed on the buried oxide layer(60) formed on the well region(51). An isolation layer(80) is formed between the buried oxide layers(60) of the first and the second thin films(71,72). The first conductive layer(61) is formed in a passing hole of the buried oxide layer(60) located at a lower portion of the first thin film(71). The second conductive layer(62) is formed in a passing hole of the buried oxide layer(60) located at a lower portion of the second thin film(72). The first transistor(91) is formed on the first thin film(71). The second transistor(92) is formed on the second thin film(72).