PROGRAMMABLE SEMICONDUCTOR DEVICE STRUCTURES AND METHODS FOR MAKING THE SAME

摘要

A programmable device and methods for making the programmable device are provided. The programmable device includes a link metallization line with an oxide layer defined above the link metallization line. A via hole is patterned in the oxide layer which defines a path to the link metallization line. A programming metallization line is defined over the oxide layer. The programming metallization line has an overlap portion that lies over the via hole. The overlap portion is configured to melt into the via hole to define a programming link between the link metallization line and the programming metallization line. In one example, the melting is accomplished by implementing a laser that can direct laser energy toward a desired programmable device to achieve the desired programming.