Method of manufacturing a bipolar transistor

摘要

Production of a bipolar transistor comprises preparing a semiconductor substrate having a conducting region; applying a first insulating layer, a conducting layer and a second insulating layer to the substrate; applying a mask; anisotropically etching the insulating layers and isotropically etching the conducting layer to form an opening; forming a collector and a base in the opening by selective epitaxy; and producing an emitter. Preferred Features: The first insulating layer is made from silicon oxide. The second insulating layer is made from silicon nitride or silicon oxide. The conducting layer is made from polycrystalline silicon. The emitter is produced by a polycrystalline silicon deposition or by epitaxial deposition. The base has a layer of silicon-germanium.