发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING IT
摘要 <p>PURPOSE: To provide a semiconductor device and a method of manufacturing it wherein the number of manufacturing processes can be reduced and necessary masking materials can be reduced with respect to the semiconductor device having a fuse. CONSTITUTION: For an oxide film 21c as an upper part insulating layer, when forming an opening part for a contact wiring 22c, the oxide film 21c including a fuse region 26 is removed. Further, the contact wiring 22c that connects wiring layers 23b, 23c above and below the oxide film 21c electrically and the wiring laver 23c that should be located in the upper part of the oxide film 21c are formed as one upper part conducting layer 25 simultaneously.</p>
申请公布号 KR20010096549(A) 申请公布日期 2001.11.07
申请号 KR20010000358 申请日期 2001.01.04
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 TERASHIMA TOMOHIDE;YAMAMOTO FUMITOSHI;YAMASHITA YASUNORI
分类号 H01L21/82;H01L23/525;(IPC1-7):H01L21/82 主分类号 H01L21/82
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