| 摘要 |
PURPOSE: A method for forming a metal wire is provided to form a metal line by depositing selectively a metal layer using a chemical vapor deposition method. CONSTITUTION: An interlayer dielectric is formed on an upper portion of a semiconductor substrate(101). An interlayer dielectric pattern(103) having a depressed portion is formed by etching a part of the interlayer dielectric. A seed layer(107a) is formed on the interlayer dielectric pattern(103) except for a sidewall of the depressed portion. A surface catalyzer is supplied to a surface of the above structure. The surface catalyzer is acted only on the seed layer(107a). A chemical deposition material is provided to the structure including the surface catalyzer in order to form a metal layer. The metal layer is grown only on the seed layer(107a) by performing the chemical vapor deposition method. The depressed portion is filled by growing the metal layer. A metal layer pattern(109a) is formed by removing the remaining metal wire(109a) except for the metal line(109a) formed on the depressed portion from the structure.
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