| 摘要 |
PURPOSE: A fabrication method of a nonvolatile memory cell is provided to improve an integration degree by minimizing the size of the memory cell. CONSTITUTION: After forming a field oxide, source and drain regions are formed in an active region of a silicon substrate. After sequentially forming a tunneling oxide and a floating gate, a first insulating layer is formed on the resultant structure. A conductive pattern(211a) is formed to electrically connect with the source and drain regions. After forming a second insulating layer on the entire surface of the resultant structure, a control gate is formed on the second insulating layer. After forming a third insulating layer on the resultant structure, a contact hole is formed by selective etching the third and second insulating layers to expose the surface of the conductive pattern(211a). A metal wire(218) is formed in the contact hole and on the third insulating layer.
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