METHOD FOR MANUFACTURING CONTACT PLUG AND CONTACT ELECTRODE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A fabrication method of a contact plug and a contact electrode is provided to minimize a GILD(Gate Induced Drain Leakage) by preventing an out-diffusion of heavily doped ions into a substrate. CONSTITUTION: A gate electrode(14) having a conductive layer(14a) and a hard mask(14b) is formed on a silicon substrate(10) having a field oxide(12). After forming a spacer(16) at both sidewalls of the gate electrode(14), source and drain regions(18) are formed. After forming and patterning a nitride(20) and a first interlayer dielectric(40a), the source and drain region(18) is then exposed by self-align contact process. An undoped polysilicon(30a) and a doped polysilicon(30b) are sequentially deposited into contact holes. By planarizing the doped polysilicon(30b), a self-align contact electrode(30) is formed. After forming a second interlayer dielectric(40b), a bit line(50) and a storage node(60) are formed to connect to the contact electrode(30).