METHOD FOR FORMING PASSIVATION PATTERN OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A passivation pattern formation method is provided to easily remove polymer residues existed on a nitride pattern, thereby minimizing a damage of a metal pattern. CONSTITUTION: A passivation pattern(34a) having a window(35) for connecting between a connector wire and a metal pattern(32) is formed on a semiconductor substrate(30) having the metal pattern(32). A nitride layer is formed on the passivation pattern(34a), at inner of the window(35) and on the exposed metal pattern. A nitride spacer(36a) is formed at both sidewalls of the window(35) by etch-back of the nitride layer. Then, polymer residues generated at the etch-back process are entirely removed by cleaning the nitride spacer(36a) using an organic cleaning solution.