| 摘要 |
The invention relates to semiconductor lasers and can be used for fiber-optic communication, medicine and for processing of materials. The invention is directed at concentrating the totality of a radiant energy in one beam having a diffraction divergence for a high-power strip of a wide-aperture multimode in transverse direction laser diodes lying on the focal plane of a lens, ensuring a compact system for concentrating the radiation. The wide-aperture and multimode laser diodes are used in the strip placed inside an external cavity. Geometrical parameters of an active medium and of the cavity are selected from a criterion of transfer of the working operation of an isolated laser diode from the multimode operation thereof into a single-mode in transverse direction operation inside the external cavity with the freshnel numbers NF= (S/2)<2>/ lambda L<1, where S represents a width of the laser diode strip, lambda represents the emission wavelength, L represents the length of the cavity. The external cavity performs the selection of a basic mode having Gaussian distribution for an isolated wide-aperture emitter in transverse direction, and also of a supermode for a strip in phase. |
