Method of manufacturing semiconductor device

摘要

Provided is a method of manufacturing a semiconductor device having a capacitor above a semiconductor substrate, with which it is possible to reduce the number of steps and the cost of manufacture. Specifically, a polysilicon layer (12) in which impurity is diffused is deposited on the entire surface including the inside of a hole (8A). An etching process of the polysilicon layer (12) is performed to form a storage node electrode composed of the polysilicon layer (12) remaining on the bottom and side of a groove for metallization (15) and in the hole (8A). The storage node electrode is broadly divided into a storage node electrode body disposed on the bottom and side of the groove for metallization (15), and a plug part disposed in the hole (8A). The storage node electrode is electrically connected via the plug part to a diffused region (19) of a semiconductor substrate (1).