Simultaneous bumping/bonding process utilizing edge-type conductive pads and device fabricated

摘要

A method for simultaneous bumping/bonding an IC chip to a semiconductor substrate and a semiconductor package fabricated by the method are described. In the method, a plurality of edge-type conductive pads formed of under-bump-metallurgy layers are first fabricated on an IC chip by dicing through conductive pads formed on a silicon wafer. The edge-type conductive pads, or UBM layer, are then positioned in close proximity to conductive elements formed on a top surface of a semiconductor substrate. A volume of solder is then applied to the interface between the conductive pads and the conductive elements to form electrical bonds between the two. A suitable method for applying the volume of solder may be a solder jetting technique, a solder printing technique or a method utilizing pre-applied solder paste on the surfaces to be bonded together. The present invention method allows a multiplicity of IC chips equipped with edge-type conductive pads to be fabricated by dicing a silicon wafer through conductive pads formed on a top surface. A multiplicity of IC chips can be fabricated at low fabrication cost. The method further provides the benefit that an IC chip may be bonded to a semiconductor substrate in either a face-up or a face-down position. This is made possible by the conductive pads formed on the vertical edges of the IC chip which connect to conductive elements formed on a semiconductor substrate.