Semiconductor device and method for fabricating the same

摘要

The present invention provides a semiconductor device and a method for fabricating the same. In the present invention, an electron depletion preventing layer is formed in a bottom portion of a polysilicon gate of MOSFET devices. In addition, the ion-implanted layer of boron ions is formed in an upper portion of the polysilicon gate to increase conductivity thereof. Because the electron depletion preventing layer is formed in the bottom portion of the polysilicon gate, electron depletion and boron penetration into the transistor channel region can be reduced and thus operational properties of the semiconductor device can be stabilized.