| 摘要 |
A process for use in fabrication of a semiconductor device is disclosed. The fabricated semiconductor device includes a top oxide aperture within a top oxidation layer and a bottom oxide aperture within a bottom oxidation layer precisely positioned relative to each other, and an electrical contact to a contact layer between the top and bottom oxidation layers. The process includes the following steps: etching past one of the oxidation layers and stopping in the contact layer, etching one or more holes traversing the top and bottom oxidation layers, and simultaneously oxidizing both oxidation layers. Etching past both oxidation layers in the same alignment step ensures that the centers of the two apertures, as formed through selective oxidation, will be aligned. Using this technique in the fabrication of semiconductor devices that include optically pumped vertical cavity surface emitting lasers promotes low-loss refractive index guiding combined with a mechanically robust and reproducibly fabricatable structure. The aligned oxide apertures provide a lateral refractive index profile, which guides the optical energy.
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