| 发明名称 |
Multi-stage arsenic doping process to achieve low resistivity in silicon crystal grown by czochralski method |
| 摘要 |
A method of lowering the resistivity of resultant silicon crystal from a Czochralski crystal growing process by adding arsenic dopant to the melt in multiple stages.
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| 申请公布号 |
US6312517(B1) |
申请公布日期 |
2001.11.06 |
| 申请号 |
US20000568751 |
申请日期 |
2000.05.11 |
| 申请人 |
MEMC ELECTRONIC MATERIALS, INC. |
发明人 |
BANAN MOHSEN;KULKARNI MILIND;WHITMER, II CHARLES |
| 分类号 |
C30B29/06;C30B15/00;C30B15/04;(IPC1-7):C30B15/04 |
主分类号 |
C30B29/06 |
| 代理机构 |
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