发明名称 Semiconductor device and a method of manufacturing the same
摘要 In a liquid crystal display device, an improved storage capacitance that uses a pair of transparent conductive films for electrodes is provided. On a flattening film made of a resin, a first transparent conductive film and an insulating film for capacitance are formed into a lamination to form in this laminated film an opening portion. An insulating film covering near the opening portion is formed. A transparent conductive film is formed and patterned to form a pixel electrode. Thus is formed a storage capacitance having the structure where the insulating film for capacitance is sandwiched between the first transparent conductive film and the pixel electrode.
申请公布号 US6313481(B1) 申请公布日期 2001.11.06
申请号 US19990356377 申请日期 1999.07.19
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;SHARP KABUSHIKI KAISHA 发明人 OHTANI HISASHI;NAKAZAWA MISAKO
分类号 H01L27/10;G02F1/1362;(IPC1-7):H01L29/04;H01L31/036;H01L31/037 主分类号 H01L27/10
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