发明名称 |
Semiconductor device and a method of manufacturing the same |
摘要 |
In a liquid crystal display device, an improved storage capacitance that uses a pair of transparent conductive films for electrodes is provided. On a flattening film made of a resin, a first transparent conductive film and an insulating film for capacitance are formed into a lamination to form in this laminated film an opening portion. An insulating film covering near the opening portion is formed. A transparent conductive film is formed and patterned to form a pixel electrode. Thus is formed a storage capacitance having the structure where the insulating film for capacitance is sandwiched between the first transparent conductive film and the pixel electrode.
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申请公布号 |
US6313481(B1) |
申请公布日期 |
2001.11.06 |
申请号 |
US19990356377 |
申请日期 |
1999.07.19 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;SHARP KABUSHIKI KAISHA |
发明人 |
OHTANI HISASHI;NAKAZAWA MISAKO |
分类号 |
H01L27/10;G02F1/1362;(IPC1-7):H01L29/04;H01L31/036;H01L31/037 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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