发明名称 Thin film electrostatic shield for inductive plasma processing
摘要 A plasma reactor and methods for processing semiconductor substrates are described. An induction coil inductively couples power into the reactor to produce a plasma. A thin electrostatic shield is interposed between the induction coil and plasma to reduce capacitive coupling. The shield is electromagnetically thin such that inductive power passes through the shield to sustain the plasma while capacitive coupling is substantially attenuated. Reducing capacitive coupling reduces modulation of the plasma potential relative to the substrate and allows for more controllable processing.
申请公布号 US6312555(B1) 申请公布日期 2001.11.06
申请号 US20000528562 申请日期 2000.03.20
申请人 CTP, INC. 发明人 DAVIET JEAN-FRANCOIS
分类号 H05H1/46;H01J37/32;H01L21/302;H01L21/3065;(IPC1-7):H05H1/00 主分类号 H05H1/46
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