发明名称 |
Process for preparing defect free silicon crystals which allows for variability in process conditions |
摘要 |
A process for growing a single crystal silicon ingot having an axially symmetric region substantially free of agglomerated intrinsic point defects. The ingot is grown generally in accordance with the Czochralski method; however, the manner by which the ingot is cooled from the temperature of solidification to a temperature which is in excess of about 900° C. is controlled to allow for the diffusion of intrinsic point defects, such that agglomerated defects do not form in this axially symmetric region. Accordingly, the ratio v/G0 is allowed to vary axially within this region, due to changes in v or G0, between a minimum and maximum value by at least 5%.
|
申请公布号 |
US6312516(B2) |
申请公布日期 |
2001.11.06 |
申请号 |
US19990344036 |
申请日期 |
1999.06.25 |
申请人 |
MEMC ELECTRONIC MATERIALS, INC. |
发明人 |
FALSTER ROBERT J.;VORONKOV VLADIMIR;MUTTI PAOLO |
分类号 |
C30B15/00;C30B33/00;(IPC1-7):C30B15/00 |
主分类号 |
C30B15/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|