发明名称 |
Circuit-integrated light-receiving device |
摘要 |
A circuit-integrated light-receiving device of the present invention includes: a semiconductor substrate of a first conductivity type; a first semiconductor crystal growth layer of the first conductivity type provided on a surface of the semiconductor substrate, wherein the first semiconductor crystal growth layer includes a first portion whose impurity concentration gradually decreases in a direction away from the surface of the semiconductor substrate and a second portion located in a first region above the first portion whose impurity concentration distribution is uniform in a depth direction; a buried diffusion layer of the first conductivity type located in a second region which is above the first portion of the first semiconductor crystal growth layer and does not overlap the first region; a second semiconductor crystal growth layer of a second conductivity type which is provided across a surface of the first semiconductor crystal growth layer and a surface of the buried diffusion layer; and a separation diffusion region having the first conductivity type for dividing the second semiconductor crystal growth layer into a light-receiving device section and a signal processing circuit section. The first region is located in the light-receiving device section. In the signal processing circuit section, the buried diffusion layer is in contact with the first portion of the first semiconductor crystal growth layer.
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申请公布号 |
US6313484(B1) |
申请公布日期 |
2001.11.06 |
申请号 |
US19990472886 |
申请日期 |
1999.12.28 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
OHKUBO ISAMU;KUBO MASARU;FUKUNAGA NAOKI;TAKIMOTO TAKAHIRO;OKA MUTSUMI;KASAMATSU TOSHIMITSU |
分类号 |
H01L27/144;(IPC1-7):H01L27/15 |
主分类号 |
H01L27/144 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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