发明名称 Apparatus for processing material at controlled temperatures
摘要 Semiconductor processing apparatus, including a chamber, into which a semiconductor wafer is introduced for processing thereof and a heater, which heats the wafer in the chamber. A radiation guide collects thermal radiation from a selected region of the wafer. A wafer support assembly supports the wafer and shields the radiation guide from radiation other than radiation from the region. A pyrometer, coupled to receive the radiation from the guide, analyzes the radiation to determine a temperature of the region, for use in controlling the processing.
申请公布号 US6313443(B1) 申请公布日期 2001.11.06
申请号 US19990294149 申请日期 1999.04.20
申请人 STEAG CVD SYSTEMS, LTD. 发明人 HARNIK ARIE;SCHWARZFUCHS ELIE;ISKEVITCH ELIEZER
分类号 H01L21/205;H01L21/00;H01L21/26;(IPC1-7):A21B1/00 主分类号 H01L21/205
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