Semiconductor device having multi-layered pad and a manufacturing method thereof

摘要

Provided is a semiconductor device having a multi-layered pad, including a first interlevel insulating layer formed on a semiconductor substrate; a first conductive pad formed on the first interlevel insulating layer, the first conductive pad extending lengthwise along a first edge on a first side of a pad window region; a second interlevel insulating layer formed on the first interlevel insulating layer having a first via hole exposing a defined region of the first conductive pad; a first conductive plug formed in the first via hole; a second conductive pad formed on the second interlevel insulating layer, the second conductive pad extending lengthwise along the first edge on the first side of the pad window region and being electrically coupled to the first conductive plug; a third interlevel insulating layer formed on the second interlevel insulating layer having a second via hole exposing a defined region of the second conductive pad; a second conductive plug formed in the second via hole; and a third conductive pad formed on a defined region of the third interlevel insulating layer, the third conductive pad being electrically coupled to the second conductive plug. The semiconductor device further comprises a fourth interlevel insulating layer formed on the third interlevel insulating layer having a third via hole exposing a defined region of the third conductive pad and a fourth conductive pad formed on a defined region of the fourth interlevel insulating layer, the fourth conductive pad being electrically coupled to the third conductive pad. The semiconductor device even further comprises a plurality of buffer layers formed on at least one of the first and second interlevel insulating layers under the pad window region. The plurality of buffer layers is arranged either in a mosaic layout or in a zigzag manner.