| 摘要 |
A wiring layer of a semiconductor integrated circuit comprises a first conductive film made of a material containing Al. A material, which reacts with Al at a rate lower than that at which Ti reacts with Al, is provided on the first conductive film. A first barrier metal film is formed, and an interlayer insulating film is formed thereon. An opening is formed in the interlayer insulating film so as to expose the first barrier metal film. The opening is buried to form a second conductive film electrically connected to the first conductive film.
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