| 摘要 |
A semiconductor device having a multilayered interconnection structure comprises a wiring pattern (15) composed of a main wiring metal (13) having a forward-tapered shape and a subsidiary wiring metal (14) of a high-melting-point metal formed on side surfaces of the main wiring metal (13). The wiring pattern (15) as a whole has a width substantially equal to that of a bottom end of the main wiring metal (13). After a silicon oxide film (16) is deposited, a through hole (160) is formed in the silicon oxide film (16). The width of the through hole (160) at its bottom is greater and smaller than those of the upper surface and the lower surface of the main wiring metal (13), respectively.
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