发明名称 |
Low source inductance compact FET topology for power amplifiers |
摘要 |
A field effect transistor (FET) comprising a plurality of drain finger electrodes, source finger electrodes and gate finger electrodes disposed in an active region of a semiconductor substrate; a drain bus disposed outside the active region and electrically connecting the drain finger electrodes to each other; a gate bus disposed outside the active region and electrically connecting the gate finger electrodes to each other; and a source bus disposed outside the active region and electrically connecting the source finger electrodes to each other; wherein the drain fingers are electrically connected to each other via the drain bus without crossing over the source or gate fingers. |
申请公布号 |
US6313512(B1) |
申请公布日期 |
2001.11.06 |
申请号 |
US19990257119 |
申请日期 |
1999.02.25 |
申请人 |
TYCO ELECTRONICS LOGISTICS AG |
发明人 |
SCHMITZ NORBERT A.;ABBOTT VICTOR G. |
分类号 |
H01L21/336;H01L23/482;H01L29/417;H01L29/423;H01L29/78;H01L29/812;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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