| 摘要 |
PURPOSE: A method for manufacturing an isolation layer of a semiconductor device is provided to shorten process time and to reduce manufacturing cost by using APCVD(Atmospheric Pressure CVD) instead of LPCVD(Low Pressure CVD). CONSTITUTION: An interlayer dielectric including the first, second and third polysilicon layer(1,2,3) is formed on a semiconductor substrate. An oxide layer(6) is deposited on the polysilicon layers by APCVD. A BPSG(Boron-Phosphorous Silicate Glass) layer(7) is then deposited on the oxide layer by APCVD. The BPSG layer is planarized by annealing.
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