发明名称 Semiconductor device
摘要 An electrical circuit for measuring threshold voltages and also a circuit for controlling threshold value variations, while avoiding a need to significantly modify or alter the circuit layout, are provided. A semiconductor device has a plurality of substrate conductor regions commonly shared by multiple metal insulator semiconductor field effect transistors (MISFETs) of the same conductivity type, wherein each of the plurality of substrate conductor regions is electrically separated or isolated from one another.
申请公布号 US6313511(B1) 申请公布日期 2001.11.06
申请号 US20000537111 申请日期 2000.03.29
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 NOGUCHI MITSUHIRO
分类号 H01L21/822;H01L21/82;H01L21/8234;H01L27/02;H01L27/04;H01L27/088;H01L27/118;(IPC1-7):H01L29/76;H01L31/113 主分类号 H01L21/822
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