MNOS-type memory using single electron transistor and driving method thereof

摘要

A metal nitride oxide semiconductor (MNOS) type memory using a threshold voltage variation (DELTAVth) due to charging of a single electron when the width of a channel of the memory is set to be smaller than or equal to the Debye screen length (LD) of an electron, and a driving method thereof, are provided. The MNOS memory uses a threshold voltage variation (DELTAVth) due to charging of a single electron occurring when the width of a channel is set to be smaller than or equal to the Debye screen length (LD) which depends on the impurity concentration of a semiconductor substrate.