发明名称 |
Positive photoresist composition |
摘要 |
A positive photoresist composition includes (A) an alkali-soluble resin, and (B) a photosensitizer including an ester of a 1,2-naphthoquinonediazidesulfonyl compound with a compound of the following formula (I). This positive photoresist composition has satisfactory sensitivity, definition, and depth of focus properties, can form both dense patterns and isolation patterns with good shapes in the formation of mixed resist patterns, and can minimize inverted taper shape formation of isolation resist patterns induced by shifts of focal depth to the minus side.
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申请公布号 |
US6312863(B1) |
申请公布日期 |
2001.11.06 |
申请号 |
US20000618723 |
申请日期 |
2000.07.18 |
申请人 |
TOKYO OHKA KOGYO CO., LTD. |
发明人 |
HIDESAKA SHINICHI;SAWANO ATSUSHI;DOI KOUSUKE;KOHARA HIDEKATSU;NAKAYAMA TOSHIMASA |
分类号 |
H01L21/027;G03F7/004;G03F7/022;G03F7/023;(IPC1-7):G03F7/023;G03F7/30 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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