发明名称 |
Semiconductor substrate and manufacturing method of semiconductor substrate |
摘要 |
A single-crystal silicon substrate having a surface layer which has been heat-treated in a reducing atmosphere containing hydrogen is prepared. An ion-implantation layer is formed by implanting oxygen ions. Subsequently, a buried oxide film (BOX) layer is formed by a desired heat-treatment utilizing the ion-implantation layer. An SOI substrate having a single-crystal silicon layer (SOI layer) which is formed on the BOX layer and has a remarkably reduced number of defects such as COPs is obtained.
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申请公布号 |
US6313014(B1) |
申请公布日期 |
2001.11.06 |
申请号 |
US19990332102 |
申请日期 |
1999.06.14 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
SAKAGUCHI KIYOFUMI;SATO NOBUHIKO |
分类号 |
H01L21/76;H01L21/02;H01L21/265;H01L21/324;H01L21/762;H01L27/12;(IPC1-7):H01L29/72 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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