发明名称 Semiconductor circuit device having hierarchical power supply structure
摘要 Resistance elements are inserted into a main power supply line and a main ground line so that offset differential amplifiers receive voltages developed across the same. The differential amplifiers control transistors connected to a sub power supply line and a sub ground line. Thus, a leakage current flowing from the sub power supply line to the main ground line and that flowing from the main power supply line to the sub ground line are regularly kept constant. Consequently, it is possible to prevent an operation delay in an initial stage of a standby state while keeping an effect of reducing a subthreshold leakage current in a semiconductor circuit device having a hierarchical power supply structure.
申请公布号 US6313695(B1) 申请公布日期 2001.11.06
申请号 US19990301359 申请日期 1999.04.29
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 OOISHI TSUKASA;HIDAKA HIDETO
分类号 H03K19/00;G05F1/10;G11C5/06;G11C5/14;G11C11/407;H01H47/00;H02B1/24;H02J1/00;H02J3/00;H03H11/26;(IPC1-7):G05F1/10 主分类号 H03K19/00
代理机构 代理人
主权项
地址