| 摘要 |
PURPOSE: A method of producing a P-type nitride based III-V compound semiconductor and a method of fabricating a semiconductor device using the same are provided to be capable of simply activating a p-type impurity, and a method of fabricating a semiconductor device using the compound semiconductor thus produced. CONSTITUTION: A nitride based III-V compound semiconductor(12) doped with a p-type impurity is formed on a substrate(11) made from sapphire. The substrate on which the nitride based III-V compound semiconductor(12) has been formed is then placed between a pair of RF electrodes(22,23), and a radio frequency field is applied between the RF electrodes(22,23). With this operation, electrons present in the compound semiconductor(12) attack the bonding between the p-type impurity and hydrogen, to cut the bonding. The hydrogen atoms thus dissociated are released from the compound semiconductor(12), to thereby activate the p-type impurity. In this case, it is not required to heat the compound semiconductor by a heater or the like.
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