发明名称 PRODUCTION METHOD FOR OPTOELECTRONIC ELEMENT
摘要 PURPOSE: To provide a production method without the contact resistance becoming high and the defective display being generated in a connecting part with a pixel electrode 11 and a gate electrode 1, a source electrode 7, a drain electrode 6 or the like, even when low resistance wiring material is used to an optoelectronic element holding a liquid crystal layer between a TFT array substrate, in which a display pixel having a pixel electrode 11 connected electrically to a thin-film transistor is formed on an insulating substrate and a counter substrate. CONSTITUTION: As a metal thin film acting as the gate electrode 1, etc., or a metal thin film acting as the source electrode 7, the drain electrode 6, etc., the metal thin film which has a layer 1a, consisting of a metal, and a layer 1b in which the nitrogen atom is added to the metal, is used.
申请公布号 KR20010095037(A) 申请公布日期 2001.11.03
申请号 KR20010016163 申请日期 2001.03.28
申请人 ADVANCED DISPLAY CO., LTD. 发明人 INOUE KAZUNORI;ISHIGA NOBUAKI;MAEDA YOICHIRO;NAKAMURA NOBUHIRO
分类号 G02F1/136;G02F1/1362;G02F1/1368;G09F9/00;G09F9/30;H01L21/336;H01L29/786;(IPC1-7):G02F1/136 主分类号 G02F1/136
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